Transparent metal oxides for low power neuromorphic devices (Record no. 10643)

MARC details
000 -LEADER
fixed length control field 02750nam a2200169 4500
003 - CONTROL NUMBER IDENTIFIER
control field BML
082 ## - DEWEY DECIMAL CLASSIFICATION NUMBER
Classification number 530.41
Item number KHO
100 ## - MAIN ENTRY--PERSONAL NAME
Personal name Khone, Darshika Sanjay
245 ## - TITLE STATEMENT
Title Transparent metal oxides for low power neuromorphic devices
260 ## - PUBLICATION, DISTRIBUTION, ETC. (IMPRINT)
Place of publication, distribution, etc Gurugram
Name of publisher, distributor, etc BML Munjal University
Date of publication, distribution, etc 2024
300 ## - PHYSICAL DESCRIPTION
Extent 163 p.
502 ## - DISSERTATION NOTE
Dissertation note Thesis submitted in the fulfillment of the requirement for the degree of Doctor of Philosophy by Darshika Sanjay Khone Under the supervision of Dr. Abhimanyu Singh Rana and Dr. Suchitra Rajput Chauhan
Degree type Doctor of Philosophy
Year degree granted 2024
520 ## - SUMMARY, ETC.
Summary, etc. The motivation for this thesis was to study the resistive switching and memristive properties of metal insulator metal structure neuromorphic device due to the increasing demand of computing power consumption where neuromorphic electronics can pay a vital role. Therefore, we have fabricated the transparent thin films like a- tantalum oxide (Ta2O5) and a- hafnium oxide (HfO2) was grown using electron beam evaporation technique. The increasing demand for transparent and flexible electronic devices in a range of applications, including wearable electronics, augmented reality displays, and transparent smart windows and circuits, has motivated significant research efforts to develop T-RRAM (Transparent- Resistive Random-Access Memory) and F-RRAM (Flexible- Resistive Random-Access Memory) devices. These devices have a capacitor like Metal-Insulator-Metal (MIM) architecture. We have fabricated the device based on different optimized coatings on transparent glass substrate and flexible substrate. We have successfully developed transparent smart materials thin film for neuromorphic devices which exhibit more than 85% transparency. We have found that it shows a clear hysteresis and RS behavior and, in some case, also memristive behavior. After that a comprehensive examination of the RS characteristics demonstrated by the fabricated transparent resistance memory device. A thorough analysis is conducted to study the RS behavior, aiming to clarify the filamentary mechanisms. Experimental results containing voltage-current characteristics, retention, endurance tests, and cumulative probability distributions are presented and discussed. These findings aim to provide valuable insights into the performance and reliability of the device. Additionally, we explored the RS phenomena in more detail by examining how it depends on different operational characteristics. This includes the impact of altering the thickness of insulating switching materials, employing different top electrodes, and analyzing the effects of external perturbations such as temperature variations and gamma irradiation.
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Engineering and technology
650 ## - SUBJECT ADDED ENTRY--TOPICAL TERM
Topical term or geographic name as entry element Physics
942 ## - ADDED ENTRY ELEMENTS (KOHA)
Source of classification or shelving scheme Dewey Decimal Classification
Koha item type Thesis
Holdings
Withdrawn status Lost status Source of classification or shelving scheme Damaged status Not for loan Collection code Home library Current library Date acquired Source of acquisition Total Checkouts Full call number Barcode Date last seen Price effective from Koha item type Public note
    Dewey Decimal Classification     Reference BMU Library BMU Library 23/09/2024 BML Munjal University   530.41 KHO TH11 24/09/2024 24/09/2024 Thesis School of Engineering & Technology

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